Copper and Copper Alloy Sputtering Targets

Copper and copper alloy sputtering targets are critical materials in semiconductor PVD processes, primarily used to form copper interconnects, seed layers, and copper-based functional thin films. High-purity copper targets are suitable for UBM, TSV, TGV, and RDL applications, while CuMn targets serve applications requiring stricter control over alloy composition and microstructural uniformity.

We supply high-purity copper and CuMn sputtering targets, backed by full in-house manufacturing capabilities-from ultra-high-purity copper refining and alloy melting to grain and crystallographic orientation control, precision machining, target bonding, automated cleaning, vacuum packaging, and quality inspection. Products can be customized as monolithic or backing-plate-bonded structures based on tool type, chamber design, and existing target drawings. We support control over dimensions, critical impurities, alloy ratios, surface quality, and bond integrity to enable direct replacement, sample validation, and second-source qualification.

Copper and Copper Alloy Sputtering Target Products

We offer high-purity copper sputtering targets and CuMn copper-manganese alloy sputtering targets for semiconductor PVD applications. Specifications are matched to film design, tool architecture, target dimensions, microstructure, and bonding method, supporting monolithic, bonded, or custom-engineered configurations.

High-Purity Copper Sputtering Targets

High-purity copper sputtering targets are primarily used in semiconductor copper interconnects, UBM, TSV, TGV, RDL, and wafer-level packaging metallization processes. Key controls include material purity, oxygen and metallic impurities, grain structure, internal defects, and surface cleanliness to ensure stable copper film deposition and batch consistency.

CuMn Copper-Manganese Alloy Sputtering Targets

CuMn copper-manganese sputtering targets use high-purity copper as the base material, with controlled manganese content and microstructure to meet stringent requirements for copper-based alloy films, compositional uniformity, and process stability in semiconductor PVD applications. Mn content, impurity limits, grain structure, and target configuration can be confirmed against existing process specifications.

Target Dimensions and Structural Configuration

We supply 6-inch, 8-inch, and 12-inch high-purity copper targets and develop CuMn targets per project specifications. Outer diameter, thickness, edge profile, backing plate, rear-side features, and mounting interfaces can be customized based on PVD tool, chamber, and cathode design, supporting monolithic, bonded, or drawing-based manufacturing solutions.

Target Form: Circular planar targets and custom shapes per drawing

Key Dimensions: Outer diameter, thickness, and assembly height confirmed per tool drawings

Product Structure: Monolithic or backing-plate bonded

Backing Plate Configuration: Material, dimensions, and cooling-side features confirmed per project

Machined Features: Steps, grooves, center holes, mounting holes, and alignment features

Surface and Tolerances: Surface roughness, flatness, and dimensional tolerances executed per approved drawings

• Circular Planar Copper Sputtering Target

  The circular planar target is a common configuration in semiconductor wafer PVD. Actual diameter, thickness, and edge geometry must be confirmed based on tool interface requirements.

• Monolithic Copper Sputtering Target

  The target body uses a monolithic structure without an interface between the sputtering layer and a dissimilar backing plate.

• Monolithic Copper Sputtering Target

  The target is integrated with an aluminum, copper, or other backing plate into a complete assembly. The backing plate and bonding method are selected based on thermal management, power density, and cathode design.

• Custom Machined Copper Sputtering Target

  Supports custom machining of steps, grooves, mounting holes, alignment features, and specialized rear or edge profiles for direct replacement and tool compatibility.

Semiconductor Copper Target Application Solutions

For various semiconductor PVD and advanced packaging processes, we provide high-purity copper or CuMn target selection, structural matching, sample validation, and volume ramp-up support based on film design, tool model, chamber architecture, and existing target specifications.

Copper Interconnect Seed Layer

Material Control:High-purity copper with low impurities

Process Matching:Optimized target grade and structure

Qualification Support:From sample validation to volume supply

UBM and Wafer-Level Packaging

Structural Compatibility:Tool and backing plate adaptation

Batch Control:Consistent material and machining quality

Replacement Development:Second-source qualification support

TSV, TGV, and RDL

Target Customization:Monolithic or bonded options

Tool Compatibility:Dimension and interface matching

Project Support:From prototyping and validation to volume delivery

Advanced Copper Alloy Metallization

Composition Customization:Mn content tailored to requirements

Microstructure Control:Enhanced alloy and grain uniformity

Process Validation:Specification adjustment and testing support

Power Semiconductors and MEMS

Flexible Customization:Non-standard specifications supported

Drawing-Based Machining:Profile and backing plate matching

Phased Qualification:Samples, pilot lots, and mass production

How to Choose Between High-Purity Copper and CuMn Targets

High-purity copper and CuMn copper-manganese sputtering targets serve different film designs and semiconductor PVD processes. Selection should be based on target film composition, alloy requirements, tool architecture, critical impurities, and approved process specifications-not solely on purity or price.

High-purity copper targets are better suited for broad copper seed layer and conductive metallization applications, while CuMn targets are ideal for projects with defined requirements for Mn content and copper-based alloy films. Final material selection should be based on target film composition, alloy ratio, PVD chamber design, and approved process specifications.

Material and Manufacturing Advantages

Ultra-High-Purity Raw Material Base: Capable of producing 7N and 8N ultra-high-purity copper feedstock; finished copper targets available in 6N grade.

CuMn Composition Control: Mn content, alloy uniformity, and grain structure tailored to process requirements.

Integrated Finished Product Supply: Supports precision machining, monolithic or bonded structures, cleaning, inspection, and vacuum packaging.

Production Capacity and Quality Control

We provide end-to-end manufacturing support-from high-purity copper feedstock and CuMn alloy melting to grain control, CNC machining, target bonding, cleaning, packaging, and final inspection-and collaborate with customers on sample validation and second-source qualification.

High-Purity Feedstock: Capable of 7N and 8N ultra-high-purity copper; finished copper targets offered in 6N grade.

Alloy and Microstructure: Supports control of CuMn composition, grain structure, and microstructural uniformity.

Finished Product Manufacturing: Supports monolithic targets and FSW/DB bonded configurations with precision CNC machining.

Clean Processing: Automated cleaning, clean drying, and vacuum packaging provided.

Based on your existing part numbers, drawings, legacy targets, and tool configurations, we offer: prototype target fabrication, material and structural matching, post-PVD specification adjustments, second-source validation, and volume supply after sample approval. Sample inquiries are welcome.

FAQ

1. What is copper sputtering target primarily used for in semiconductor manufacturing?

High-purity copper sputtering targets are primarily used in PVD metallization processes for copper interconnect seed layers, UBM, TSV, TGV, RDL, and wafer-level packaging. The specific target grade and structure must be confirmed based on film stack design, tool type, and chamber configuration.

2. What is the difference between high-purity copper targets and CuMn targets?

High-purity copper targets are suitable for a wide range of copper conductive and seed layer depositions, with emphasis on purity, impurity control, grain structure, and particle performance. CuMn targets are used for specific copper alloy films and require tighter control over Mn content, alloy homogeneity, and microstructure.

3. Can the Mn content in CuMn targets be customized?

We can evaluate the Mn content and allowable tolerance based on your film composition, existing process specifications, and qualification requirements. Once samples are approved, the material composition and volume production parameters can be finalized.

4. Do you supply 6-inch, 8-inch, and 12-inch copper targets?

High-purity copper targets are available in 6-inch, 8-inch, and 12-inch sizes. CuMn target dimensions depend on product specifications and project requirements. Actual outer diameter, thickness, edge profile, and backing plate design should always be confirmed against tool drawings.

5. What is the difference between monolithic and bonded targets?

Monolithic targets are machined directly from a single piece of target material without an interface to a dissimilar backing plate. Bonded targets consist of a target bonded to a backing plate, allowing selection of bonding solutions based on thermal management, power handling, cathode interface, and mechanical assembly requirements.

6. Can you produce replacement targets based on existing drawings or legacy targets?

We can evaluate material, dimensions, profile, and backing plate structure based on your existing target drawings, part numbers, photos, or physical samples, and support prototyping, PVD validation, and second-source qualification.

Submit Copper Target Drawings and Process Requirements

Based on your existing drawings, target samples, PVD tool type, and process specifications, we can assess high-purity copper or CuMn target solutions and support you from specification confirmation and prototyping through process validation to volume ramp-up.

When requesting a quote, please provide:

• Target material: high-purity copper or CuMn
• Purity grade or Mn content
• Target diameter and thickness
• Tool and chamber model
• Monolithic or bonded construction
• Backing plate drawing and assembly requirements
• Grain size and critical impurity specifications
• Existing part number, drawing, or photo of legacy target
• Sample quantity and estimated annual usage

Send your current target specifications or tool drawings to receive a tailored solution for material, structure, and sample validation.